Celdas-Solares-CIE-UNAM.doc

8/13/2019 Celdas-Solares-CIE-UNAM.doc

1/23

CeldasSolares Fotovoltaicas conPoli3-octiltiofeno

Co m oSemiconductor t ip o -p

HailinZhao Hu

Centro de Investigacinen Energa

!"#$

h%h&cie'u nam'm(

Cola)oradoresen el tema*

+ra' $a'Elena"icho +a%,CIIC#p-!#E$+r' P'.'"air /+ra' $'0'S'"air ,CIE

+ra' $arina 1incn ,CIE+r'#ntonio 2imne%,CIE

Estudiantes,4553-* 6scarSalinasCecilia 7pe%

$a'Concepcin#renasHugoCortina

"arci%o $endo%aEd8in Pineda'
mailto:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]:[email protected]


2/23

Motivacinde lainvestigacinen celdassolaresplsticas:

Tecnologasdebajatemperatura => Menor costo deproduccin.Investigacinde nuevos materialesoptoelectrnicos.

Desventajas:

ajae!icienciade conversin.Inestabilidadde losmaterialesorgnicos.


3/23

"#$e%"

#

&d':$

dh

()(T:*b

sorbance

$arb.unit"

(oli)+octiltio!eno$(),T"-

(oli)+e/iltio!eno$()0T"- etc.

0 0

1rupo !uncionaldelmonmero:0

&(arael)+octiltio!eno: & 02 34

& &(arael)+e/iltio!eno: & 05 3)

& & 366

'n

26

&d'

(),T

#.6

3.7

56

(olmeros solubles'emiconductor de banda

86anca $# e%"

#6

3.6

6.7

6 6.63.# 3.5 #.6 #.8 #.2 ).#

(oton 9nerg $e%"


4/23

&itrato de 'odio 3 M 37 ml

;08,0 37 M # ml

Tiourea 3 M 7 ml

& d ' tin !ilmsb c emi c al b a t

deposition$;air et al":

&d$;,)"

#6.3 M #7 ml

*guaDestilada 7) ml

Total 366 ml

*t 56 o& !or ) rs


5/23

(olimeri@acin de )+octiltio!enoo )+e/iltio!eno$Mara9lena;ico":

A Ironsalt

' 'n

3.2 g $6.6333 mol"


6/23

Dra. Ma.9lena

;icoFsGab. in

&II&*p+H*9M


7/23

).6 #. #.2 #.4 #.5 #.7 #.8

4 5 7 8 ) # 3

$a" sample* $


8/23

()*T: &n0#nA3(),T:

n=2

()0T:' n=5

n

$a" ()0T $b" (),T

M . 9 . ;icoL-


9/23

*bsorbance

3.#

3.6

6.2

6.5

6.8

6.68

6.6#

6.66

()0T

(),T

6.2 3.# 3.5 #.6

()0T

(),T

6.#

6.6

6.7 3.6 3.7 #.6 #.7 ).6 ).7 8.6

(oton energ $e%"

M . 9 . ;icoL-


10/23

Abso

rbance

(elculaspor goteo $ 6.4+37 m" por spin-coating$76+566 nm"

6.5

*u(),T $spin+coating"

&d' aPo Qumico

IT,

6.67

6.68

6.6)e

e

6.6#d

c

a

1lass 'ubstrate

6.8

6.)

6.63

6.66

+6.63

b

6.5 6.2 3.6 3.# 3.8 3.5 3.2 #.6

d

'pin+coated pristine(),T !ilms

concentrationin toluene :

$d" 7 - $b" 36- $c" 37- $d" #6

$e" and $e" )6 mgJml.

6.#

6.6

c

b

a

6.7 3.6 3.7 #.6 #.7 ).6 ).7 8.6


11/23

Photon

nergy!e"#


12/23

8.7).7

3.

Diagramad e nivelesenergRticos

%acuum level: 6 Hnit: e%

8 . #$%$%&O&O e+

7.)

cc

IITTO'O'

AAgg'(u'(u

7.3+7.)

)i'Au **OO&&OO

P3P3OOTT

A

e+

AuAu#.8

vv

((dd++

(otocurrent


13/23

Hn ejemplode lapreparacin de laeterounin:

&d'. aPo Sumico$M.T.' ;air O (..;air".

(),T: goteo

(),T solution

'ubstrate $&d' or glass"

Dring

(),T !ilm'ubstrate $&d' or glass"

(),T : Toluene= 3mgJ3ml

376< ? $57&"- por una ora


14/23

%oltagegeneratedb !luorescent ligt

tube $bacground ligt".

%oc voltage generated b incident ligt

bulb.


15/23

Table. P3OT film thic,ness as functions of P3OT solution concentration and

the film preparation method.

(),T solution

concentration $mgJmG"

#.7 7 36 #6

'pin+coated $'&" (),T

!ilm ticness $nm"

365 325 ))8

Drop+cast $D&" (),T

!ilm ticness $nm"

543 #86 47#3


16/23

325

D& 3I6nm3I6

D& 543nm

))8

'& 325nm543

'&

))8nm552

*bsorption&oe!!icient$-cm

+

3"

o/geno

368

o/geno

3.6 3.7 #.6 #.7 ).6 ).7 8.6

( oton 9nerg$e%"


17/23

&urrentDe

nsit

$m*Jcm

#"

366

'& 365 nm

'& 325 nm

'& ))8 nm

36+# D& 543 nm

D& #8I6 nm

D& 47#3 nm

36

+8

36+5

36+2

+6.2 +6.8 6.6 6.8 6.2

*ppliedvoltage$%"


18/23

&urrentDens

it$m*Jcm

#"

6.66

+6.67

+6.36

+6.37

+6.#6

'& 365 nm

'& 325 nm

'& ))8 nm

D& 543 nm

D& #86 nm

D& 47#3 nm

6.6 6.8 6.2 3.#

*pplied%oltage$%"


19/23

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Celdas-Solares-CIE-UNAM.doc