FGA20S125P

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© 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGA20S125P Rev. C3

April 2013

F GA2 0 S 1 2

5 P 1 2 5 0 V ,2 0 A S h or t e d - an o d eI GBT

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Notes:1: Limited by Tjmax

Symbol Description Ratings UnitVCES Collector to Emitter Voltage 1250 V

VGES Gate to Emitter Voltage ±25 V

ICCollector Current @ TC = 25oC 40 A

Collector Current @ TC = 100oC 20 A

ICM (1) Pulsed Collector Current 60 A

IF Diode Continuous Forward Current @ TC = 25oC 40 A

IF Diode Continuous Forward Current @ TC = 100oC 20 A

PDMaximum Power Dissipation @ TC = 25oC 250 W

Maximum Power Dissipation @ TC = 100oC 125 W

TJ Operating Junction Temperature -55 to +175o

CTstg Storage Temperature Range -55 to +175 oC

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds300 oC

Symbol Parameter Typ. Max. Unit

RθJC(IGBT) Thermal Resistance, Junction to Case -- 0.6 oC / W

RθJA Thermal Resistance, Junction to Ambient -- 40 oC / W

G C E

TO-3PN

G

C

E

FGA20S125P1250 V, 20 A Shorted-anode IGBT

Features

• High Speed Switching

• Low Saturation Voltage: VCE(sat) = 2.0 V @ IC = 20 A

• High Input Impedance

• RoHS Compliant

Applications

• Induction Heating, Microwave oven

General Description

Using advanced field stop trench and shorted anode technol-

ogy, Fairchild®’s shorted-anode trench IGBTs offer superior con-

duction and switching performances for soft switching

applications. The device can operate in parallel configuration

with exceptional avalanche capability. This device is designed

for induction heating and microwave oven.

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F GA2 0 S 1 2 5 P 1 2 5 0 V ,2 0 A S h or t e d - an

o d eI GBT


FGA20S125P Rev. C3

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity

FGA20S125P FGA20S125P TO-3PN - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

ICES Collector Cut-Off Current VCE = 1250, VGE = 0V - - 1 mA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±500 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 20mA, VCE = VGE 4.5 6.0 7.5 V

VCE(sat) Collector to Emitter Saturation Voltage

IC = 20A, VGE = 15V

TC = 25oC- 2.0 2.5 V

IC = 20A, VGE = 15V,TC = 125oC

- 2.22 - V

IC = 20A, VGE = 15V,

TC = 175oC- 2.44

-

V

VFM Diode Forward VoltageIF = 20A, TC = 25oC - 1.75 2.4 V

IF = 20A, TC = 175oC - 2.22 - V

Dynamic Characteristics

Cies Input CapacitanceVCE = 30V, VGE = 0V,

f = 1MHz

- 1360 - pF

Coes Output Capacitance - 40 - pF

Cres Reverse Transfer Capacitance - 26 - pF

Switching Characcteristics

td(on) Turn-On Delay Time

VCC = 600V, IC = 20A,

RG = 10Ω, VGE = 15V,

Resistive Load, TC = 25oC

- 10 - ns

tr Rise Time - 260 - ns

td(off) Turn-Off Delay Time - 400 - ns

tf Fall Time - 100 - ns

Eon Turn-On Switching Loss - 0.74 - mJ

Eoff Turn-Off Switching Loss - 0.50 - mJ

Ets Total Switching Loss - 1.24 - mJ

td(on) Turn-On Delay Time

VCC = 600V, IC = 20A,RG = 10Ω, VGE = 15V,

Resistive Load, TC = 175oC

- 11 - ns

tr Rise Time - 320 - ns

td(off) Turn-Off Delay Time - 420 - ns

tf Fall Time - 250 - ns

Eon Turn-On Switching Loss - 0.94 - mJ

Eoff Turn-Off Switching Loss - 1.23 - mJ

Ets Total Switching Loss - 2.17 - mJ

Qg Total Gate Charge

VCE = 600V, IC = 20A,

VGE = 15V

- 129 - nC

Qge Gate to Emitter Charge - 9 - nC

Qgc Gate to Collector Charge - 66 - nC

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FGA20S125P Rev. C3

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation VoltageCharacteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer CharacteristicsCharacteritics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.00

20

40

60

80

100

120

140

160

8V

VGE = 17V

10V

9V

20VTC = 25

oC

15V

12V

C o l l e c t o r C u r r e n t , I C [ A ]

Collector-Emitter Voltage, VCE [V]0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0

0

20

40

60

80

100

120

140

160

9V

8V

17V

TC = 175oC

15V

12V

10V

VGE = 20V


Collector-Emitter Voltage, VCE [V]

0.0 1.0 2.0 3.0 4.0 5.00

20

40

60

80

100

120

Common Emitter

VGE = 15V

TC = 25oC

TC = 175oC

C o l l e c t o

r C u r r e n t , I C

[ A ]


0 1 2 3 4 5 6 7 8 9 10 11 12 13 140

20

40

60

80Common Emitter

VCE = 20V

TC = 25oC

TC = 175oC

C o l l e c

t o r C u r r e n t , I C [ A ]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5

40A

20A

IC = 10A

Common Emitter

VGE = 15V

C o l l e c t o r - E m i t t e r V o l t a g e , V

C E

[ V ]

Collector-EmitterCase Temperature, TC [oC]

4 8 12 16 200

5

10

15

20

IC = 10A 20A 40A

Common Emitter

TC

= 25oC

C o l l e c t o r - E m i t t e r V o l t a g e , V C E

[ V ]

Gate-Emitter Voltage, VGE [V]

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FGA20S125P Rev. C3


Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteristics

Figure 11. Turn-On Characteristics vs Figure 12. Turn-off Characteristics vs.Gate Resistance Gate Resistance

4 8 12 16 20

0

4

8

12

16

20

IC = 10A 20A 40A

Common Emitter

TC = 175oC

C o l l e c t o r - E m i t t e r V o l t a g e ,

V C E

[ V ]

Gate-Emitter Voltage, VGE [V]5 10 15 20 25 30

1

10

100

1000

10000

Common Emitter

VGE = 0V, f = 1MHz

TC = 25oC

Cres

Coes

Cies

C a p a c i t a n c e [ p F ]


0 30 60 90 1200

3

6

9

12

15Common Emitter

TC = 25oC

600V

400V

VCC

= 200V

G a t e - E

m i t t e r V o l t a g e ,

V G E

[ V ]

Gate Charge, Qg [nC]

1 10 100 10000.01

0.1

1

10

100

2000

1ms

10ms

DC

*Notes:

1. TC = 25oC

2. TJ = 175oC

3. Single Pulse

10μs

100μs

C o l l e c t o r C u r r e n t , I c [ A ]


10 20 30 40 50 60 701

200

Common Emitter

VCC= 600V, VGE= 15V

IC = 20A

TC = 25oC

TC = 175oC

td(on)

tr

S w i t c h i n g T i m e [ n s ]

Gate Resistance, RG [Ω]

50 10 20 30 40 50 60 70

100

1000

10000Common Emitter

VCC= 600V, VGE= 15V

IC = 20A

TC = 25o

C

TC = 175oC

td(off)

tf



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Figure 13. Turn-on Characteristics VS. Figure 14.Turn-off Characteristics VS.Collector Current Collector Current

Figure 15. Switching Loss VS. Gate Resistance Figure 16. Switching Loss VS. Collector Current

Figure 17. Turn off Switching SOA Characteristics FIgure 18. Forward Characteristics

10 20 30 40

10

100

1000

Common Emitter

VGE = 15V, RG = 10Ω

TC

= 25oC

TC

= 175oC t

r

td(on)


Collector Current, IC [A]

10 20 30 40

100

1000

Common Emitter

VGE = 15V, RG = 10Ω

TC

= 25oC

TC

= 175oC

td(off)

tf



10 20 30 40 50 60 70

1

10Common Emitter

VCC

= 600V, VGE

= 15V

IC

= 20A

TC

= 25oC

TC

= 175oC

EonE

off

S w i t c h i n g

L o s s [ m J ]


0.1 10 20 30 40100

1k

10k

Common Emitter

VGE

= 15V, RG

= 10Ω

TC

= 25oC

TC

= 175oC

Eon

Eoff

S w i t c h i n g

L o s s [ m J ]


30

1 20.1

1

10

80

TC = 25oC

TC = 175oC

Forward Voltage, VF [V]

F o r w a r d C u r r e n t , I F [ A ]

0.51 10 100 1000

1

10

100

2000

Safe Operating Area

VGE

= 15V, TC

= 175oC



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FGA20S125P Rev. C3

Figure 19. Transient Thermal Impedance of IGBT

1E-5 1E-4 1E-3 0.01 0.1 1 101E-3

0.01

0.1

1

0.01

0.02

0.1

0.05

0.2

single pulse

T h e r m a l R e s p o n s e [ Z t h j c ]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak T j = Pdm x Zthjc + TC

0.5

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FGA20S125P Rev. C3

Mechanical Dimensions

TO-3PN

Dimensions in Millimeters

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F GA2 0 S 1 2 5 P

1 2 5 0 V ,2 0 A S h or t e d - an o d e

I GBT


FGA20S125P Rev. C3

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intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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THEREIN, WHICH COVERS THESE PRODUCTS.

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As used here in:

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STEALTH™

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SyncFET™

Sync-Lock™

®*

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®

™

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